John P. Prineas
Ph.D., University of Arizona, 2000
Experimental semiconductor physics; growth and fabrication; spectroscopy; microscopy; semiconductor nanostructures; optoelectronics and photonics; III-V MBE growth; nonlinear optics.
- Research and development of antimonide III-V compound semiconductor materials, including Ga(Al)InAsSb bulk alloys and quantum wells, InAs/Ga(In)Sb superlattices, and core-shell nanowhiskers
- Facilities include a molecular beam epitaxy lab equipped to grow III-V semiconductors, and an optical spectroscopy lab; regular use of user facilities: Microfabrication Laboratory and the Central Microscopy Research Facility
- Placement opportunities include industry, government labs, and academia